Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor
نویسندگان
چکیده
منابع مشابه
Quantum Dot Gate InGaAs FETs
This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTeZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface states at the channel-gate insulator boundary while providing sufficient barrier height to confine the carriers in the channel created by inversion. In additio...
متن کاملCharacterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region
Quantum dot lasers with an active region consisting of just a single quantum dot layer have been grown using molecular beam epitaxy and characterized from 80 to 300 K. The quantum dot lasers lase from excited states over the entire temperature range. The characteristic temperature is 185$10 K over the temperature range 80—141 K and decreases to 111$2 K from 141—304 K. The effects of scattering ...
متن کاملSingle rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides.
We report on single rolled-up microtubes integrated with silicon-on-insulator waveguides. Microtubes with diameters of ~7 μm, wall thicknesses of ~250 nm, and lengths greater than 100 μm are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from the handling GaAs substrate. The microtubes are then transferred from their host substrate to silicon-on-insulato...
متن کاملA Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.
One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limi...
متن کاملMonolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.
We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O ba...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3280368